Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the sp

Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as

III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic appl

All recent developments of nitrides and of their technology are gathered here in a single book, with chapters written by world leaders in the field.

This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24