III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic appl

Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectron

All recent developments of nitrides and of their technology are gathered here in a single book, with chapters written by world leaders in the field.

Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this

Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as