Boron Activation and Diffusion in Silicon for Varying Initial-process Conditions During Flash-assist Rapid Thermal Annealing
Author | : Renata A. Camillo-Castillo |
Publisher | : |
Total Pages | : |
Release | : 2006 |
ISBN-10 | : OCLC:496626900 |
ISBN-13 | : |
Rating | : 4/5 ( Downloads) |
Download or read book Boron Activation and Diffusion in Silicon for Varying Initial-process Conditions During Flash-assist Rapid Thermal Annealing written by Renata A. Camillo-Castillo and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: At such anneal temperatures the peak active boron concentration was independent of the amorphous layer re-crystallization temperature. The increase in active boron concentration subsequent to the re-crystallization process was also shown to be much larger than the reactivation of boron from the well researched boron interstitial cluster configuration. This fact strongly suggests the existence of boron in an alternative less stable configuration from which additional activation, subsequent to the re-crystallization process is possible.