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Language: en
Pages: 400
Pages: 400
Type: BOOK - Published: 2013-11-09 - Publisher: Springer Science & Business Media
First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical la
Language: en
Pages: 388
Pages: 388
Type: BOOK - Published: 1984 - Publisher:
Language: en
Pages: 628
Pages: 628
Type: BOOK - Published: 1996-03-14 - Publisher: Cambridge University Press
This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow dopin
Language: en
Pages: 472
Pages: 472
Type: BOOK - Published: 2016-01-23 - Publisher: Woodhead Publishing
Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric
Language: en
Pages: 269
Pages: 269
Type: BOOK - Published: 2013-04-17 - Publisher: Springer Science & Business Media
Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfa