Synthesis and Characterization of Polycrystalline Semiconductor Caesium-Tin Tri-Iodide Thin-films
Author | : Zhuo Chen |
Publisher | : |
Total Pages | : 238 |
Release | : 2013 |
ISBN-10 | : 1303535858 |
ISBN-13 | : 9781303535857 |
Rating | : 4/5 (857 Downloads) |
Download or read book Synthesis and Characterization of Polycrystalline Semiconductor Caesium-Tin Tri-Iodide Thin-films written by Zhuo Chen and published by . This book was released on 2013 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis deals with a virtually unexplored semiconductor material CsSnI3 from material synthesis, structural, optical, and electrical characterization to the fabrication and validation of CsSnI3 thin-film solar cells. We started with synthesizing CsSnI3 thin films based on CsI and SnCl2 (or SnI2) by using an apparatus which consists of e-beam and thermal evaporators. The quality of polycrystalline CsSnI3 thin-films were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). Experimental data on XRD and electron diffraction patterns taking from the synthesized thin-films match very well to the theoretically calculated ones based the first principles calculations, confirming that the synthesized CsSnI3 thin-films have an orthorhombic crystal structure. With the well-defined crystal structure, we theoretically studied the electronic band structure of CsSnI3. Extensive optical characterizations of CsSnI3 thin-films were then carried out revealing many extraordinary properties such as 1) direct band gap energy of 1.32 eV at 300 K with its abnormal temperature dependence, 2) extremely high photoluminescence quantum yield, 3) large exciton binding energy, and 4) strong two-phonon assisted excitonic absorption near band edge. These properties are interpreted in terms of the unique electronic and structural properties of CsSnI3. The value of 1.3 eV for the energy band gap of CsSnI3 suggests a unique application of CsSnI3 thin-films on solar cells. This is because this value is right in the small range of the optimal band gaps for the Shockley-Queisser maximum efficiency limit of a single-junction solar cell. A prototype Schottky solar cell was designed, fabricated, and validated. The measured power conversion efficiency (PCE) is 0.9 % which is presently limited by the series and shunt resistance. The improvement strategy on PCE is given at the end of my thesis. In order to make the CsSnI3 thin-film solar cells cost effective, various low cost materials synthesis methods for CsSnI3 are also described in this thesis. CsSnI3 thin-films can be now inexpensively deposited on to glass or other low-cost substrates. I believe that the CsSnI3 based materials are ideally suited for many applications such as lasers, light-emitting diodes, integrated photonic devices such as infrared electro-optic modulator, solar cells, and even more specialized applications such as spectral solar concentrators.