Electrical and Optical Properties of Indium Nitride and Indium-rich Nitrides Prepared by Molecular Beam Epitaxy for Opto-electronics Applications

Electrical and Optical Properties of Indium Nitride and Indium-rich Nitrides Prepared by Molecular Beam Epitaxy for Opto-electronics Applications
Author :
Publisher :
Total Pages : 300
Release :
ISBN-10 : CORNELL:31924098294527
ISBN-13 :
Rating : 4/5 ( Downloads)

Book Synopsis Electrical and Optical Properties of Indium Nitride and Indium-rich Nitrides Prepared by Molecular Beam Epitaxy for Opto-electronics Applications by : Hai Lu

Download or read book Electrical and Optical Properties of Indium Nitride and Indium-rich Nitrides Prepared by Molecular Beam Epitaxy for Opto-electronics Applications written by Hai Lu and published by . This book was released on 2003 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electrical and Optical Properties of Indium Nitride and Indium-rich Nitrides Prepared by Molecular Beam Epitaxy for Opto-electronics Applications Related Books

Growth of III-nitrides by Molecular Beam Epitaxy for High Electron Mobility Transistors and Direct-write Patterning
Language: en
Pages: 306
Indium Nitride and Related Alloys
Language: en
Pages: 707
Authors: Timothy David Veal
Categories: Technology & Engineering
Type: BOOK - Published: 2011-06-03 - Publisher: CRC Press

GET EBOOK

Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the p
Dissertation Abstracts International
Language: en
Pages: 806
Authors:
Categories: Dissertations, Academic
Type: BOOK - Published: 2004 - Publisher:

GET EBOOK

Investigations of the Gallium Nitride, Aluminum Nitride and Indium Nitride Semiconductors: Structural, Optical, Electronic and Interfacial Properties
Language: en
Pages:
Authors: Samuel Clagett Strite (III)
Categories:
Type: BOOK - Published: 1993 - Publisher:

GET EBOOK

Described in this thesis is an investigation of some fundamental physical properties of both zincblende and wurtzite Group III - Nitride wide bandgap semiconduc