Growth of III-nitrides by Molecular Beam Epitaxy for High Electron Mobility Transistors and Direct-write Patterning

Growth of III-nitrides by Molecular Beam Epitaxy for High Electron Mobility Transistors and Direct-write Patterning
Author :
Publisher :
Total Pages : 306
Release :
ISBN-10 : CORNELL:31924105543288
ISBN-13 :
Rating : 4/5 ( Downloads)

Book Synopsis Growth of III-nitrides by Molecular Beam Epitaxy for High Electron Mobility Transistors and Direct-write Patterning by : Xiaodong Chen

Download or read book Growth of III-nitrides by Molecular Beam Epitaxy for High Electron Mobility Transistors and Direct-write Patterning written by Xiaodong Chen and published by . This book was released on 2006 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Growth of III-nitrides by Molecular Beam Epitaxy for High Electron Mobility Transistors and Direct-write Patterning Related Books

Growth of III-nitrides by Molecular Beam Epitaxy for High Electron Mobility Transistors and Direct-write Patterning
Language: en
Pages: 306
MBE Growth of High Performance Nitride Devices for Energy, Communications, and Defense Applications
Language: en
Pages: 153
Authors: Kristopher Dan Matthews
Categories:
Type: BOOK - Published: 2011 - Publisher:

GET EBOOK

This thesis work features the exploration of the capabilities and limitations of devices based on MBE (Molecular Beam Epitaxy) grown IIInitride materials under
Dilute Nitride Semiconductors
Language: en
Pages: 648
Authors: Mohamed Henini
Categories: Technology & Engineering
Type: BOOK - Published: 2004-12-15 - Publisher: Elsevier

GET EBOOK

This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. It gives the
Molecular Beam Epitaxy
Language: en
Pages: 790
Authors: Mohamed Henini
Categories: Science
Type: BOOK - Published: 2018-06-27 - Publisher: Elsevier

GET EBOOK

Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in
Growth Development of III-Nitrides for Electronic Devices by Molecular Beam Epitaxy
Language: en
Pages: 200
Authors: Erin Christina Hix Kyle
Categories:
Type: BOOK - Published: 2016 - Publisher:

GET EBOOK

Immense work on the III-nitrides has taken place over the past quarter century. Nevertheless, many properties still remain poorly understood. Further knowledge