Download or read book Modeling and Mitigation of Soft Errors in Nanoscale SRAMs written by S. M. Jahinuzzaman and published by . This book was released on 2008 with total page 157 pages. Available in PDF, EPUB and Kindle. Book excerpt: Energetic particle (alpha particle, cosmic neutron, etc.) induced single event data upset or soft error has emerged as a key reliability concern in SRAMs in sub-100 nanometre technologies. Low operating voltage, small node capacitance, high packing density, and lack of error masking mechanisms are primarily responsible for the soft error susceptibility of SRAMs. In addition, since SRAM occupies the majority of die area in system-on-chips (SoCs) and microprocessors, different leakage reduction techniques, such as, supply voltage reduction, gated grounding, etc., are applied to SRAMs in order to limit the overall chip leakage. These leakage reduction techniques exponentially increase the soft error rate in SRAMs. The soft error rate is further accentuated by process variations, which are prominent in scaled-down technologies. In this research, we address these concerns and propose techniques to characterize and mitigate soft errors in nanoscale SRAMs. We develop a comprehensive analytical model of the critical charge, which is a key to assessing the soft error susceptibility of SRAMs. The model is based on the dynamic behaviour of the cell and a simple decoupling technique for the non-linearly coupled storage nodes. The model describes the critical charge in terms of NMOS and PMOS transistor parameters, cell supply voltage, and noise current parameters. Consequently, it enables characterizing the spread of critical charge due to process induced variations in these parameters and to manufacturing defects, such as, resistive contacts or vias. In addition, the model can estimate the improvement in critical charge when MIM capacitors are added to the cell in order to improve the soft error robustness. The model is validated by SPICE simulations (90nm CMOS) and radiation test.